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RHRP8120 Data Sheet January 2000 File Number 3660.2 8A, 1200V Hyperfast Diode The RHRP8120 is a hyperfast diodes with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Formerly developmental type TA49096. Features * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <55ns * Operating Temperature. . . . . . . . . . . . . . . . . . . . . . .175oC * Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V * Avalanche Energy Rated * Planar Construction Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information PART NUMBER RHRP8120 PACKAGE TO-220AC BRAND RHRP8120 Packaging JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RHRP8120 1200 1200 1200 8 16 100 75 20 -65 to 175 UNITS V V V A A A W mJ oC Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IF(AV) (TC = 140oC) Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAVL Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 1 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 2000 RHRP8120 Electrical Specifications SYMBOL VF IF = 8A IF = 8A, TC = 150oC IR VR = 1200V VR = 1200V, TC = 150oC trr IF = 1A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s ta tb QRR CJ RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. trr = Reverse recovery time (See Figure 9), summation of ta + tb. ta = Time to reach peak reverse current (See Figure 9). tb = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 9). QRR = Reverse Recovery Charge. CJ = Junction Capacitance. RJC = Thermal resistance junction to case. pw = Pulse Width. D = Duty Cycle. IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s IF = 8A, dIF/dt = 200A/s VR = 10V, IF = 0A TC = 25oC, Unless Otherwise Specified TEST CONDITION MIN TYP 30 20 165 25 MAX 3.2 2.6 100 500 55 70 2 UNITS V V A A ns ns ns ns nC pF oC/W Typical Performance Curves 40 IR , REVERSE CURRENT (A) 500 100 175oC IF, FORWARD CURRENT (A) 10 10 1 100oC 25oC 0.1 0.01 175oC 1 100oC 25oC 0.5 0 1 2 3 VF, FORWARD VOLTAGE (V) 4 5 0.001 0 200 400 600 800 1000 1200 VR , REVERSE VOLTAGE (V) FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE 2 RHRP8120 Typical Performance Curves 60 TC = 25oC, dIF/dt = 200A/s t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 50 40 80 (Continued) 100 TC = 100oC, dIF/dt = 200A/s trr 30 20 10 0 0.5 60 trr 40 ta tb ta 20 tb 1 IF, FORWARD CURRENT (A) 4 8 1 IF, FORWARD CURRENT (A) 4 8 0 0.5 FIGURE 3. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 4. trr, ta AND tb CURVES vs FORWARD CURRENT 120 100 t, RECOVERY TIMES (ns) 80 IF(AV) , AVERAGE FORWARD CURRENT (A) TC = 175oC, dIF/dt = 200A/s 10 8 DC 6 SQ. WAVE 4 trr 60 40 20 0 0.5 ta tb 2 1 IF, FORWARD CURRENT (A) 4 8 0 100 115 130 145 160 175 TC , CASE TEMPERATURE (oC) FIGURE 5. trr, ta AND tb CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE 100 CJ , JUNCTION CAPACITANCE (pF) 80 60 40 20 0 0 50 100 150 200 VR , REVERSE VOLTAGE (V) FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE 3 RHRP8120 Test Circuits and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L DUT RG VGE t1 t2 CURRENT SENSE + VDD 0 IF dIF dt ta trr tb IGBT - 0.25 IRM IRM FIGURE 8. trr TEST CIRCUIT IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VDD DUT R + VDD IV FIGURE 9. trr WAVEFORMS AND DEFINITIONS VAVL IL IL t0 t1 t2 t FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 4 |
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